Vanishing Transistor

When the transistor continues to shrink it’s difficult to maintain a strong connection between the channel and gate with the current polysilicon gates. This would drive the power consumption up due to current being drawn but not used usefully. The FinFET device is currently the most researched and whose channel is built by a narrow vertical fin that is raised from the wafer that sits on the insulator.

Beyond the transistor changes listed above, there are other technologies that will have to be implemented to continue transistor improvement.

Many of these new transistor design techniques should take place within the next decade, depending on the application. tive masses therefore increasing mobility. It’s proposed that metal gates will be helpful in removing this depletion region. The next type of transistor being researched is called a double gate that has the gate on both sides of the channel. The alloy ruthenium-tantalum was proposed as a possible gate material since the work function can be changed by switching the mix of the alloy to obtain the desired threshold voltage. It also allows for easier manufacturing since small changes in the doping can change threshold voltages and ruin the transistor. When the mobility increases, it allows for carriers to be more quickly accelerated by an electric field. This allows for much better control of the on/off states of the transistor.